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Si5853DDC
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.105 at V GS = - 4.5 V
0.143 at V GS = - 2.5 V
I D (A)
- 4 a
- 3.8
Q g (Typ.)
4.7 nC
? Halogen-free According to IEC 61249-2-21
Definition
? LITTLE FOOT ? Plus Schottky Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
0.188 at V GS = - 1.8 V
-3
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
? Charging Switch for Portable Devices
V KA (V)
20
V f (V)
Diode Forward Voltage
0.46 at 0.5 A
I F (A)
1
- With Integrated Low V f Trench Schottky Diode
1206-8 ChipFET ?
1
K
A
A
S
K
K
D
S
G
Marking Code
JH XX
G
D
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5853DDC-T1-E3 (Lead (Pb)-free)
Si5853DDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise note d
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T C = 25 °C
Symbol
V DS
V KA
V GS
Limit
- 20
20
±8
- 4 a
Unit
V
Continuous Drain Current (T J = 150 °C) (MOSFET)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
- 3.5
- 2.9 b, c
- 2.3 b, c
Pulsed Drain Current (MOSFET)
I DM
- 10
A
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
T C = 25 °C
T A = 25 °C
T C = 25 °C
T C = 70 °C
T A = 25 °C
I S
I F
I FM
- 2.6
- 1.1 b, c
1
3
3.1
2
1.3 b, c
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature) d, e
Document Number: 68979
S10-0548-Rev. B, 08-Mar-10
T A = 70 °C
T C = 25 °C
T C = 70 °C
T A = 25 °C
T A = 70 °C
P D
T J , T stg
0.8 b, c
2.5
1.6
1.2
0.76
- 55 to 150
260
W
°C
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